The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Sep. 13, 2011
Applicants:

Hiromitsu Katsui, Osaka, JP;

Takeshi Yaneda, Osaka, JP;

Yoshiyuki Isomura, Osaka, JP;

Inventors:

Hiromitsu Katsui, Osaka, JP;

Takeshi Yaneda, Osaka, JP;

Yoshiyuki Isomura, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 27/02 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); G02F 1/1362 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66742 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 27/0296 (2013.01); H01L 27/1288 (2013.01); H01L 27/1214 (2013.01); H01L 27/124 (2013.01); H01L 29/786 (2013.01); H01L 29/458 (2013.01); G02F 1/136204 (2013.01);
Abstract

A semiconductor device () according to the present invention includes a plurality of source lines (), a thin film transistor (A), and a diode element (A) that electrically connects two source lines () among the plurality of source lines (). A connection region () in which the source lines () and the diode element (A) are connected to each other includes a first electrode (), a second electrode (), a third electrode (), and a fourth electrode (). A part of each source line () is a source electrode of the thin film transistor (A), and the second electrode () and the source lines () are formed separately from each other.


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