The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Dec. 10, 2012
Applicant:

E Ink Holdings Inc., Hsinchu, TW;

Inventors:

Chia-Chun Yeh, Hsinchu, TW;

Henry Wang, Hsinchu, TW;

Yao-Chou Tsai, Hsinchu, TW;

Sung-Hui Huang, Hsinchu, TW;

Assignee:

E Ink Holdings Inc., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/10 (2006.01); H01L 27/28 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0096 (2013.01); H01L 27/286 (2013.01); H01L 27/283 (2013.01);
Abstract

A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector.


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