The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Jul. 30, 2009
Applicants:
Lin Han, Princeton, NJ (US);
Prashant Mandlik, Lawrenceville, NJ (US);
Sigurd Wagner, Princeton, NJ (US);
Inventors:
Lin Han, Princeton, NJ (US);
Prashant Mandlik, Lawrenceville, NJ (US);
Sigurd Wagner, Princeton, NJ (US);
Assignee:
The Trustees of Princeton University, Princeton, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); C23C 16/40 (2006.01); H01L 21/316 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4908 (2013.01); H01L 21/02216 (2013.01); H01L 21/02304 (2013.01); H01L 29/66765 (2013.01); H01L 21/02126 (2013.01); C23C 16/401 (2013.01); H01L 21/31633 (2013.01); H01L 21/02274 (2013.01);
Abstract
Thin-film transistors are made using an organosilicate glass (OSG) as an insulator material. The organosilicate glasses may be SiO-silicone hybrid materials deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry.