The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Jan. 20, 2006
Applicants:

Yoshitaka Moriya, Atsugi, JP;

Yasuko Watanabe, Yokohama, JP;

Yasuyuki Arai, Atsugi, JP;

Inventors:

Yoshitaka Moriya, Atsugi, JP;

Yasuko Watanabe, Yokohama, JP;

Yasuyuki Arai, Atsugi, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 23/522 (2006.01); H01L 27/13 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 27/105 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/84 (2013.01); H01L 2924/19041 (2013.01); H01L 27/12 (2013.01); H01L 27/1214 (2013.01); H01L 2221/68363 (2013.01); H01L 23/5227 (2013.01); H01L 2924/01079 (2013.01); H01L 27/13 (2013.01); H01L 2221/68327 (2013.01); H01L 21/56 (2013.01); H01L 21/6835 (2013.01); H01L 2221/68318 (2013.01); H01L 21/6836 (2013.01); H01L 27/105 (2013.01); H01L 2924/01055 (2013.01); H01L 2924/12044 (2013.01); H01L 2224/83851 (2013.01); H01L 24/83 (2013.01); H01L 2924/01012 (2013.01); H01L 27/1203 (2013.01); H01L 2924/01068 (2013.01);
Abstract

The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.


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