The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Apr. 20, 2012
Ming-daou Lee, Chiayi, TW;
Chiahua Ho, Hsinchu, TW;
Cho-lun Hsu, Hsinchu, TW;
Wen-cheng Chiu, Hsinchu, TW;
Ming-Daou Lee, Chiayi, TW;
ChiaHua Ho, Hsinchu, TW;
Cho-Lun Hsu, Hsinchu, TW;
Wen-Cheng Chiu, Hsinchu, TW;
National Applied Research Laboratories, Taipei, TW;
Abstract
The present invention discloses a resistive memory structure and a method for fabricating the same. The memory structure comprises a plurality of memory cells. Each memory cell further comprises two separate upper sub-electrodes fabricated from an upper electrode, two separate lower sub-electrodes fabricated from a lower electrode and intersecting the upper sub-electrodes, and a resistive layer arranged between the upper sub-electrodes and the lower sub-electrodes. Thereby, four sub-memory cells are formed in the intersections of the two upper sub-electrodes, the two lower sub-electrodes, and the resistive layer. Thus is increased the density of a memory structure in an identical area.