The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
May. 11, 2009
Applicant:
Pritpal Singh, Media, PA (US);
Inventor:
Pritpal Singh, Media, PA (US);
Assignee:
Villanova University, Villanova, PA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0256 (2006.01); H01L 21/02 (2006.01); H01L 31/0725 (2012.01); H01L 31/0352 (2006.01); B82Y 20/00 (2011.01); H01L 31/073 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 21/02628 (2013.01); H01L 31/0725 (2013.01); H01L 21/02557 (2013.01); H01L 21/02568 (2013.01); B82Y 20/00 (2013.01); H01L 21/02562 (2013.01); Y02E 10/544 (2013.01); H01L 31/073 (2013.01); H01L 31/1836 (2013.01);
Abstract
A multi-junction photovoltaic cell includes at least two P-N junctions electrically connected to each other in series. Each P-N junction includes a P-type absorber layer and a N-type emitter layer, each P-type absorber layer including a plurality of alternating thin film layers of zinc telluride and lead telluride, wherein zinc telluride and lead telluride have respective bandgaps when in bulk thickness and the effective bandgap of each P-type absorber layer is between the respective bandgaps. The effective bandgap of at least one P-type absorber layer is different from that of at least one other P-type absorber layer.