The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Sep. 13, 2012
David F. Hilscher, Poughkeepsie, NY (US);
Christian Lavoie, Ossining, NY (US);
Ahmet S. Ozcan, Pleasantville, NY (US);
David F. Hilscher, Poughkeepsie, NY (US);
Christian Lavoie, Ossining, NY (US);
Ahmet S. Ozcan, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of performing a silicide contact process comprises a forming a nickel-platinum alloy (NiPt) layer over a semiconductor device structure; performing a first rapid thermal anneal (RTA) so as to react portions of the NiPt layer in contact with semiconductor regions of the semiconductor device structure, thereby forming metal rich silicide regions; performing a first wet etch to remove at least a nickel constituent of unreacted portions of the NiPt layer; performing a second wet etch using a dilute Aqua Regia treatment comprising nitric acid (HNO), hydrochloric acid (HCl) and water (HO) to remove any residual platinum material from the unreacted portions of the NiPt layer; and following the dilute Aqua Regia treatment, performing a second RTA to form final silicide contact regions from the metal rich silicide regions.