The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8835300 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 16, 2014

Filed:

Mar. 09, 2012
Applicants:

Chih Chen, Hsinchu, TW;

King-ning Tu, Hsinchu, TW;

Hsiang-yao Hsiao, Hsinchu, TW;

Inventors:

Chih Chen, Hsinchu, TW;

King-Ning Tu, Hsinchu, TW;

Hsiang-Yao Hsiao, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/60 (2006.01); C23C 28/02 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
C23C 28/021 (2013.01); H01L 2224/03849 (2013.01); H01L 24/13 (2013.01); H01L 24/11 (2013.01); H01L 2924/3651 (2013.01); H01L 2924/01322 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/131 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/08503 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/01327 (2013.01); H01L 24/05 (2013.01); H01L 2224/0401 (2013.01); H01L 2924/01029 (2013.01); H01L 24/03 (2013.01);
Abstract

The present invention relates to a method for inhibiting growth of intermetallic compounds, comprising the steps of: (i) preparing a substrate element including a substrate on which at least one layer of metal pad is deposited, wherein at least one thin layer of solder is deposited onto the layer of metal pad, and then carry out reflowing process; and (ii) further depositing a bump of solder with an appropriate thickness on the substrate element, characterized in that a thin intermetallic compound is formed by the reaction of the thin solder layer and the metal in the metal pad after appropriate heat treatment of the thin solder layer. In the present invention, the formation of a thin intermetallic compound is able to slow the growth of the intermetallic compound and to prevent the transformation of the intermetallic compounds.


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Chen, Chih. (2014). Method for inhibiting growth of intermetallic compounds (U.S. Patent No. 8835300). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8835300

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