The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Aug. 07, 2013
Jinmiao J. Shen, Austin, TX (US);
Ko-min Chang, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Jinmiao J. Shen, Austin, TX (US);
Ko-Min Chang, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for forming a split gate device includes forming a first sidewall of a first conductive gate layer, wherein the semiconductor layer includes a tunnel region laterally adjacent the first sidewall, forming a dielectric layer along the first sidewall to provide for increased thickness of a gap spacer, forming a charge storage layer over a portion of a top surface of the first conductive layer and over the tunnel region, and forming a second conductive gate layer over the charge storage layer.