The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Aug. 21, 2012
Applicants:

Craig A. Grimes, Raleigh, NC (US);

Xinjian Feng, Suzhou Industrial Park, CN;

Kevin E. Kreisler, Raleigh, NC (US);

Inventors:

Craig A. Grimes, Raleigh, NC (US);

Xinjian Feng, Suzhou Industrial Park, CN;

Kevin E. Kreisler, Raleigh, NC (US);

Assignee:

Flux Photon Corporation, Bethlehem, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to growth of vertically-oriented crystalline nanowire arrays upon a transparent conductive or other substrate for use in 3generation photovoltaic and other applications. A method of growing crystalline anatase nanowires includes the steps of: deposition of titania onto a substrate; conversion of the titania into titanate nanowires; and, treatment of the titanate nanowires to produce crystalline anatase nanowires.


Find Patent Forward Citations

Grimes, Craig. (2014). Methods to fabricate vertically oriented anatase nanowire arrays on transparent conductive substrates and applications thereof (U.S. Patent No. 8835285). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8835285

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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