The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Mar. 21, 2012
Applicant:

Keisuke Nakazawa, Yokohama, JP;

Inventor:

Keisuke Nakazawa, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/76 (2006.01); H01L 21/336 (2006.01); H01L 29/76 (2006.01); H01L 29/788 (2006.01); H01L 21/70 (2006.01); H01L 27/115 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 21/764 (2013.01);
Abstract

According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a tunnel insulating film and a first conductive film are formed on a semiconductor layer. A trench is formed. A first sacrifice film is buried in the trench. A second sacrifice film having density higher than that of the first sacrifice film is formed on the first sacrifice film in the trench. An insulating film is formed on the first conductive film and the second sacrifice film. A second conductive film is formed on the insulating film. The second sacrifice film is exposed. The first sacrifice film and the second sacrifice film are removed.


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