The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Mar. 15, 2012
Applicant:
Gaku Sudo, Kanagawa-ken, JP;
Inventor:
Gaku Sudo, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 21/336 (2006.01); H01L 27/22 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 27/228 (2013.01); H01L 29/66795 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming a mask film on a partial region of a semiconductor substrate; forming a mask member above the semiconductor substrate in both the region where the mask film is formed and a region where the mask film is not formed; patterning the mask film and an upper portion of the semiconductor substrate by performing etching using the mask member as a mask. The method further includes removing part of the patterned upper portion of the semiconductor substrate by performing etching using the patterned mask film as a mask.