The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Dec. 06, 2011
Young-pil Kim, Hwaseong-si, KR;
Hyung-ik Lee, Suwon-si, KR;
Woo-sung Jeon, Suwon-si, KR;
Ki-hong Kim, Asan-si, KR;
Jung-yun Won, Hwaseong-si, KR;
In-sun Jung, Hwaseong-si, KR;
Young-Pil Kim, Hwaseong-si, KR;
Hyung-Ik Lee, Suwon-si, KR;
Woo-Sung Jeon, Suwon-si, KR;
Ki-Hong Kim, Asan-si, KR;
Jung-Yun Won, Hwaseong-si, KR;
In-Sun Jung, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.