The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Oct. 02, 2009
Tatsuyuki Nishimiya, Nagasaki, JP;
Kazutaka Uda, Nagasaki, JP;
Kohei Kawazoe, Nagasaki, JP;
Tomoyoshi Baba, Nagasaki, JP;
Takashi Ishide, Nagasaki, JP;
Tatsuyuki Nishimiya, Nagasaki, JP;
Kazutaka Uda, Nagasaki, JP;
Kohei Kawazoe, Nagasaki, JP;
Tomoyoshi Baba, Nagasaki, JP;
Takashi Ishide, Nagasaki, JP;
Mitsubishi Heavy Industries, Ltd., Tokyo, JP;
Abstract
Provided is a photoelectric conversion device fabrication method in which current leakage from an intermediate contact layer via an intermediate-contact-layer separating groove is prevented as much as possible. Included are a step of film-forming a top layer having amorphous silicon as a main component; a step of film-forming, on the top layer, an intermediate contact layer electrically and optically connected thereto; a step of separating the intermediate contact layer by removing the intermediate contact layer by irradiating it with a pulsed laser, forming an intermediate-contact-layer separating groove that reaches the top layer; and a step of film-forming, on the intermediate contact layer and inside the intermediate-contact-layer separating groove, a bottom layer electrically and optically connected thereto and having microcrystalline silicon as a main component. A pulsed laser having a pulse width of 10 ps to 750 ps, inclusive, is used as the pulsed laser for separating the intermediate contact layer.