The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
May. 29, 2012
Applicant:
Hirokazu Saito, Tokyo, JP;
Inventor:
Hirokazu Saito, Tokyo, JP;
Assignee:
LAPIS Semiconductor Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3114 (2013.01); H01L 24/20 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/19 (2013.01); H01L 2224/80904 (2013.01); H01L 2225/06548 (2013.01); H01L 24/13 (2013.01); H01L 2224/055571 (2013.01); H01L 25/50 (2013.01); H01L 23/5389 (2013.01); H01L 2224/221 (2013.01); H01L 24/19 (2013.01); H01L 2224/13023 (2013.01); H01L 25/0657 (2013.01); H01L 2924/01029 (2013.01); H01L 2224/05573 (2013.01); H01L 23/49816 (2013.01); H01L 2224/214 (2013.01); H01L 2225/06524 (2013.01);
Abstract
A semiconductor device is manufactured by forming a first dielectric film on a substrate, forming an aperture in the first dielectric film, mounting a semiconductor chip in the aperture, forming a second dielectric film on the first dielectric film and the semiconductor chip, and forming an interconnection wiring structure on the second dielectric film. The second dielectric film secures the semiconductor chip without the need to etch the substrate or use an adhesive die attachment film.