The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Nov. 27, 2013
Applicant:

Sanyo Electric Co., Ltd., Moriguchi, JP;

Inventors:

Takuo Nakai, Osaka, JP;

Naoki Yoshimura, Kaizuka, JP;

Masaki Shima, Uji, JP;

Assignee:

Sanyo Electric Co., Ltd., Moriguchi, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02363 (2013.01); Y02E 10/50 (2013.01);
Abstract

The present invention reduces the time required to manufacture a solar cell. After etching main surfaces (BB) of a crystalline silicon substrate (B) using one etching solution, the main surfaces (BB) of the crystalline silicon substrate (B) are etched at a lower etching rate than the etching performed using the one etching solution by using another etching solution that has a higher concentration of etching components than the one etching solution. In this way, a textured structure is formed in the main surfaces (BB) of the crystalline silicon substrate (B).


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