The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Mar. 13, 2013
Applicant:
Memc Electronic Materials, Inc., St. Peters, MO (US);
Inventors:
Seok-Min Yun, Cheonan-si, KR;
Seong-Su Park, Cheonan, KR;
Se-Myung Kim, Cheonan, KR;
Won-Jin Choi, Cheonan, KR;
Woo-Jin Yoon, Gwangmyeong-si, KR;
Assignee:
SunEdison Semiconductor Limited, St. Peters, MO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B07B 4/00 (2006.01); B07B 4/02 (2006.01);
U.S. Cl.
CPC ...
B07B 4/00 (2013.01); B07B 4/02 (2013.01); Y10S 209/908 (2013.01); Y10S 209/932 (2013.01);
Abstract
A method of removing dust from granular polysilicon includes introducing a stream of granular polysilicon, dispersing the longitudinal stream of granular polysilicon by redirecting the stream into a radially outward flow having a circular pattern, and introducing a counter flow of gas in an opposite direction to that of the longitudinal stream of granular polysilicon to contact the radially outward flow to separate the dust from the granular polysilicon.