The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Apr. 06, 2011
Hans-ulrich Pfeiffer, Zürich, CH;
Andrew Cannon Carter, Blisworth, GB;
Jörg Troger, Raron, CH;
Norbert Lichtenstein, Langnau Am Albis, CH;
Michael Schwarz, Altendorf, CH;
Abram Jakubowicz, Pfäffikon, CH;
Boris Sverdlov, Adliswil, CH;
Hans-Ulrich Pfeiffer, Zürich, CH;
Andrew Cannon Carter, Blisworth, GB;
Jörg Troger, Raron, CH;
Norbert Lichtenstein, Langnau Am Albis, CH;
Michael Schwarz, Altendorf, CH;
Abram Jakubowicz, Pfäffikon, CH;
Boris Sverdlov, Adliswil, CH;
II-VI Laser Enterprise GmbH, Zurich, CH;
Abstract
A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.