The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Feb. 25, 2011
Hideki Watanabe, Kanagawa, JP;
Masaru Kuramoto, Kanagawa, JP;
Takao Miyajima, Kanagawa, JP;
Hiroyuki Yokoyama, Miyagi, JP;
Hideki Watanabe, Kanagawa, JP;
Masaru Kuramoto, Kanagawa, JP;
Takao Miyajima, Kanagawa, JP;
Hiroyuki Yokoyama, Miyagi, JP;
Sony Corporation, Tokyo, JP;
Abstract
There is provided a driving method of a self-oscillating semiconductor laser device including a first compound semiconductor layer having a first conductive type and composed of a GaN base compound semiconductor, a third compound semiconductor layer and a second compound semiconductor layer configuring an emission region and a saturable absorption region, are successively laminated, a second electrode formed on the second compound semiconductor layer, and a first electrode electrically connected to the first compound semiconductor layer. The second electrode is separated into a first portion to create a forward bias state by passing current to the first electrode via the emission region and a second portion to apply an electric field to the saturable absorption region by a separation groove. The current greater than a current value where kink is occurred in optical output-current characteristics is to be passed to the first portion of the second electrode.