The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Apr. 12, 2012
Applicants:
Kyoung-lae Cho, Gyeonggi-do, KR;
Jun-jin Kong, Gyeonggi-do, KR;
Jae-hong Kim, Seoul, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 29/56 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); G11C 29/12 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G11C 2029/1208 (2013.01); G11C 29/56008 (2013.01); G11C 16/3418 (2013.01); G11C 2029/4402 (2013.01); G11C 29/44 (2013.01);
Abstract
A method of operating a memory controller, a memory controller, a memory device and a memory system are provided. The method includes reading first data from a nonvolatile memory device using a first read voltage, the first data includes a uncorrectable error bit, reading second data from a nonvolatile memory device using a second read voltage different from the first read voltage, the second data includes an correctable error bit, and reprogramming the nonvolatile memory device according to the comparison result of the first read voltage and the second read voltage.