The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Aug. 26, 2011
Applicants:

Yoshitaka Sasago, Tachikawa, JP;

Hiroyuki Minemura, Kokubunji, JP;

Takashi Kobayashi, Higashimurayama, JP;

Toshimichi Shintani, Kodaira, JP;

Satoru Hanzawa, Hachioji, JP;

Masaharu Kinoshita, Tsukuba, JP;

Inventors:

Yoshitaka Sasago, Tachikawa, JP;

Hiroyuki Minemura, Kokubunji, JP;

Takashi Kobayashi, Higashimurayama, JP;

Toshimichi Shintani, Kodaira, JP;

Satoru Hanzawa, Hachioji, JP;

Masaharu Kinoshita, Tsukuba, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 47/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 2213/71 (2013.01); G11C 2213/72 (2013.01);
Abstract

The purpose of the present invention is to improve a rewriting transmission rate and reliability of a phase change memory. To attain the purpose, a plurality of phase change memory cells (SMC or USMC) which are provided in series between a word line () and a bit line () and have a selection element and a storage element that are parallel connected with each other are entirely set, and after that, a part of the cells corresponding to a data pattern is reset. Alternatively, the reverse of the operation is carried out.


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