The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Oct. 21, 2011
Applicants:

Wei Yi, Mountain View, CA (US);

Feng Miao, Mountain View, CA (US);

Jianhua Yang, Palo Alto, CA (US);

Inventors:

Wei Yi, Mountain View, CA (US);

Feng Miao, Mountain View, CA (US);

Jianhua Yang, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/56 (2006.01); G11C 27/00 (2006.01); G11C 29/50 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50008 (2013.01); G11C 2013/009 (2013.01); G11C 13/0011 (2013.01); G11C 13/004 (2013.01); G11C 11/5685 (2013.01); G11C 13/0069 (2013.01); G11C 11/56 (2013.01); G11C 13/0007 (2013.01); G11C 27/005 (2013.01); G11C 2013/0078 (2013.01); G11C 13/0004 (2013.01); G11C 11/5678 (2013.01); G11C 2013/0076 (2013.01); G11C 2213/15 (2013.01); G11C 13/0002 (2013.01); G11C 13/00 (2013.01); G11C 2013/0083 (2013.01);
Abstract

The present disclosure provides a data storage device that includes multi-level memory cells. The data storage device may include circuitry configured to write data to the multi-level memory cell. The write circuitry may include compliance circuitry configured to implement continuously tunable switching. The write circuitry may be configured to select a compliance mode for the switching, the compliance mode being selected from the group comprising current compliance and voltage compliance.


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