The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Sep. 12, 2011
Applicants:
Shunpei Yamazaki, Tokyo, JP;
Jun Koyama, Kanagawa, JP;
Kazutaka Inukai, Kanagawa, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/10 (2006.01);
U.S. Cl.
CPC ...
Abstract
There is provided an electronic device in which the deterioration of the device is prevented and an aperture ratio is improved without using a black mask and without increasing the number of masks. In the electronic device, a first electrode () is disposed on another layer different from the layer on which a gate wiring () is disposed as a gate electrode, and a semiconductor layer of a pixel switching TFT is superimposed on the gate wiring () so as to be shielded from a light. Thus, the deterioration of the TFT is suppressed, and a high aperture ratio is realized.