The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Dec. 29, 2010
Applicant:

Ju Heon Yang, Seoul, KR;

Inventor:

Ju Heon Yang, Seoul, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/535 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2006.01); H01L 23/522 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 24/24 (2013.01); H01L 2224/48227 (2013.01); H01L 24/16 (2013.01); H01L 2225/06565 (2013.01); H01L 2224/73259 (2013.01); H01L 24/73 (2013.01); H01L 2924/01005 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 2225/06541 (2013.01); H01L 24/06 (2013.01); H01L 2224/92224 (2013.01); H01L 25/0657 (2013.01); H01L 24/92 (2013.01); H01L 23/522 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/01047 (2013.01); H01L 2224/24145 (2013.01); H01L 2924/01006 (2013.01); H01L 2225/06551 (2013.01); H01L 24/13 (2013.01); H01L 2224/241 (2013.01); H01L 2224/24221 (2013.01); H01L 2224/245 (2013.01); H01L 2224/16145 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01033 (2013.01); H01L 2224/06183 (2013.01); H01L 2225/0651 (2013.01); H01L 2924/01029 (2013.01);
Abstract

A semiconductor chip includes a semiconductor substrate with a top surface and a bottom surface. An active layer may be formed on the top surface of the semiconductor substrate and may comprise one or more signal pads and one or more chip selection pads on an upper surface of the active layer. First and second through electrodes may be formed to pass through the semiconductor substrate and the active layer, with the first through electrodes being electrically connected with the signal pads and the second through electrodes being electrically connected with the chip selection pads. A side electrode may be formed on a side surface of the semiconductor chip in such a way as to be connected with a second through electrode.


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