The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

May. 24, 2012
Applicants:

Tetsuo Fujii, Toyohashi, JP;

Keisuke Gotoh, Toyohashi, JP;

Kenichi AO, Tokai, JP;

Inventors:

Tetsuo Fujii, Toyohashi, JP;

Keisuke Gotoh, Toyohashi, JP;

Kenichi Ao, Tokai, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); G01P 1/02 (2006.01); B60C 23/04 (2006.01); G01L 9/00 (2006.01); G01P 15/08 (2006.01); G01L 19/00 (2006.01); B81B 7/02 (2006.01); G01P 15/125 (2006.01);
U.S. Cl.
CPC ...
G01L 9/0073 (2013.01); G01P 1/023 (2013.01); B60C 23/0488 (2013.01); G01P 15/08 (2013.01); G01L 19/0092 (2013.01); G01L 9/0085 (2013.01); B81B 2201/025 (2013.01); B81B 7/02 (2013.01); G01P 15/125 (2013.01); B81B 2207/015 (2013.01);
Abstract

A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.


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