The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Jun. 25, 2009
Applicants:

Jon Gladish, Forty Fort, PA (US);

Arthur Black, Sunnyvale, CA (US);

Inventors:

Jon Gladish, Forty Fort, PA (US);

Arthur Black, Sunnyvale, CA (US);

Assignee:

Fairchild Semiconductor Corporation, South Portland, ME (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H03K 17/16 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H03K 17/162 (2013.01); H01L 29/42368 (2013.01); H01L 29/7835 (2013.01); H01L 29/4175 (2013.01); H01L 29/7803 (2013.01); H01L 29/4238 (2013.01); H01L 29/0696 (2013.01); H01L 29/402 (2013.01); H01L 29/7806 (2013.01); H01L 29/66181 (2013.01); H01L 29/407 (2013.01); H01L 29/7817 (2013.01); H01L 29/7813 (2013.01);
Abstract

In one general aspect, a semiconductor structure can include a power transistor including a body region extending in a silicon region, a gate electrode insulated from the body region by a gate dielectric, a source region extending in the body region where the source region is of opposite conductivity type from the body region, a source interconnect contacting the source region, and a backside drain. The semiconductor structure can include an RC snubber monolithically integrated with the power transistor in a die. The RC snubber can include a snubber electrode insulated from the silicon region by a snubber dielectric such that the snubber electrode and the silicon region form a snubber capacitor.


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