The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Mar. 15, 2013
Applicant:
Dongbu Hitek Co., Ltd., Seoul, KR;
Inventors:
Jae Hyun Yoo, Bucheon-si, KR;
Jong Min Kim, Seoul, KR;
Assignee:
LG Innotek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01); H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 29/73 (2006.01); H01L 29/36 (2006.01); H01L 23/62 (2006.01); H01L 29/87 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/87 (2013.01); H01L 29/66121 (2013.01);
Abstract
An electrostatic discharge protection device is provided. The electrostatic discharge protection device can include a semiconductor substrate having a first well and a second well, a silicon controller rectifier (SCR) device, and first and second impurity areas disposed on the first and second wells to form a PN junction. The SCR can have a PNPN structure or an NPNP structure, and the PN junction structure and the SCR device can be alternately disposed when the substrate is viewed from above.