The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Jul. 20, 2012
Jong IN Yang, Gyeonggi-do, KR;
Sung Tae Kim, Seoul, KR;
Yong IL Kim, Gyeonggi-do, KR;
Su Yeol Lee, Gyeonggi-do, KR;
Seung Wan Chae, Gyeonggi-do, KR;
Hyung Duk Ko, Seoul, KR;
Yung Ho Ryu, Gyeonggi-do, KR;
Jong In Yang, Gyeonggi-do, KR;
Sung Tae Kim, Seoul, KR;
Yong Il Kim, Gyeonggi-do, KR;
Su Yeol Lee, Gyeonggi-do, KR;
Seung Wan Chae, Gyeonggi-do, KR;
Hyung Duk Ko, Seoul, KR;
Yung Ho Ryu, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.