The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Feb. 23, 2011
Applicant:
Masao Kikuchi, Tokyo, JP;
Inventor:
Masao Kikuchi, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 23/433 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 23/552 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3107 (2013.01); H01L 23/4334 (2013.01); H01L 24/30 (2013.01); H01L 25/072 (2013.01); H01L 2924/10272 (2013.01); H01L 2224/48225 (2013.01); H01L 2924/01005 (2013.01); H01L 24/45 (2013.01); H01L 2924/3511 (2013.01); H01L 24/29 (2013.01); H01L 24/48 (2013.01); H01L 24/32 (2013.01); H01L 2924/01006 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/13055 (2013.01); H01L 25/18 (2013.01); H01L 23/552 (2013.01); H01L 2924/014 (2013.01); H01L 2924/13091 (2013.01); H01L 24/73 (2013.01); H01L 2224/73221 (2013.01); H01L 2224/40137 (2013.01); H01L 2924/01079 (2013.01); H01L 2224/73215 (2013.01); H01L 2924/01082 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/291 (2013.01); H01L 2224/451 (2013.01); H01L 2224/32245 (2013.01); H01L 2924/01068 (2013.01); H01L 2224/73263 (2013.01); H01L 2224/30181 (2013.01); H01L 2924/1815 (2013.01); H01L 2924/01033 (2013.01); H01L 24/34 (2013.01); H01L 24/06 (2013.01);
Abstract
Provided is a power semiconductor device including: a power semiconductor element; a metal block as a first metal block that is connected to the power semiconductor element through an upper surface electrode pattern as a first upper surface electrode pattern selectively formed on an upper surface of the power semiconductor element; and a mold resin filled so as to cover the power semiconductor element and the metal block, wherein an upper surface of the metal block is exposed from a surface of the mold resin.