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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8829530 B1

PDFFull Text
Expired
Date of Patent:
Sep. 09, 2014

Filed:

Nov. 16, 2012

Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate

Applicants:

Seiji Sarayama, Miyagi, JP;

Hirokazu Iwata, Miyagi, JP;

Inventors:

Seiji Sarayama, Miyagi, JP;

Hirokazu Iwata, Miyagi, JP;

Assignee:

Ricoh Company, Ltd., Tokyo, JP;

Attorney:

Cooper & Dunham LLP

Primary Examiner:

Dao H Nguyen

Assistant Examiner:

Tram H Nguyen

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); C30B 9/12 (2006.01); C30B 23/02 (2006.01); C30B 25/18 (2006.01); C30B 9/00 (2006.01); C30B 29/40 (2006.01); C30B 17/00 (2006.01); H01L 29/20 (2006.01); H01L 21/20 (2006.01); C30B 25/20 (2006.01);
U.S. Cl.
CPC ...
C30B 9/00 (2013.01); C30B 9/12 (2013.01); C30B 23/025 (2013.01); C30B 25/18 (2013.01); C30B 29/403 (2013.01); C30B 17/00 (2013.01); H01L 29/2003 (2013.01); H01L 21/20 (2013.01); C30B 25/20 (2013.01);
Abstract

A crystal producing apparatus includes a crystal forming unit and a crystal growing unit. The crystal forming unit forms a first gallium nitride (GaN) crystal by supplying nitride gas into melt mixture containing metal sodium (Na) and metal gallium (Ga). The first GaN crystal is sliced and polished to form GaN wafers. The crystal growing unit grows a second GaN crystal on a substrate formed by using a GaN wafer, by the hydride vapor phase epitaxy method, thus producing a bulked GaN crystal.

Find Patent Forward Citations

Sarayama, Seiji. (2014). Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate (U.S. Patent No. 8829530). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8829530

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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