The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Nov. 04, 2013
Applicant:
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Inventors:
Shijian Qin, Shenzhen, CN;
Chengming He, Shenzhen, CN;
Assignee:
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/20 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66765 (2013.01); H01L 29/78618 (2013.01);
Abstract
The present invention provides a thin film transistor (TFT) manufacturing method and a TFT, a source electrode or drain electrode of the TFT is electrically connected to a data line directly during a forming process by providing a through hole in a surface above the data line of the TFT, so as to save the process cost. Further, the source electrode and drain electrode of the TFT are also manufactured with poly-silicon rather than metal material used in prior art, processing steps are simplified, thereby further saving the process cost.