The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Dec. 20, 2012
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Jong-baek Seon, Yongin-si, KR;
Tae-sang Kim, Seoul, KR;
Hyun-suk Kim, Hwaseong-si, KR;
Myung-kwan Ryu, Yongin-si, KR;
Joon-seok Park, Seongnam-si, KR;
Seok-jun Seo, Anyang-si, KR;
Kyoung-seok Son, Seoul, KR;
Sang-yoon Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Samsung Display Co., Ltd., Gyeonggi-do, KR;
Abstract
Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode.