The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Sep. 15, 2011
Hsiu-chun Hsieh, Hsinchu, TW;
Yi-wei Chen, Hsinchu County, TW;
Ta-wei Chiu, Changhua County, TW;
Chung-tao Chen, Taipei, TW;
Hsiu-Chun Hsieh, Hsinchu, TW;
Yi-Wei Chen, Hsinchu County, TW;
Ta-Wei Chiu, Changhua County, TW;
Chung-Tao Chen, Taipei, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A hybrid thin film transistor includes a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first gate, a first source, a first drain and a first semiconductor layer disposed between the first gate, the first source and the first drain, and the first semiconductor layer includes a crystallized silicon layer. The second thin film transistor includes a second gate, a second source, a second drain and a second semiconductor layer disposed between the second gate, the second source and the second drain, and the second semiconductor layer includes a metal oxide semiconductor layer.