The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Mar. 12, 2009
Applicants:

Jonathan James Michael Halls, Cambridge, GB;

Craig Edward Murphy, Teddington, GB;

Kiyotaka Mori, Bracknell, GB;

Inventors:

Jonathan James Michael Halls, Cambridge, GB;

Craig Edward Murphy, Teddington, GB;

Kiyotaka Mori, Bracknell, GB;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/40 (2006.01); H01L 29/08 (2006.01); H01L 51/10 (2006.01); C08G 61/12 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/105 (2013.01); H01L 51/0545 (2013.01); H01L 51/0022 (2013.01); C08G 2261/92 (2013.01); C08G 61/126 (2013.01); C08G 2261/3223 (2013.01); C08G 2261/1424 (2013.01); H01L 51/0037 (2013.01); H01L 51/102 (2013.01); H01L 51/0541 (2013.01);
Abstract

An organic thin film transistor comprising source and drain electrodes, an organic semiconductor disposed in a channel region between the source and drain electrodes, a gate electrode, and a dielectric disposed between the source and drain electrodes and the gate electrode, wherein the source electrode and the drain electrode comprise at least one different physical and/or material property from each other.


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