The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Mar. 18, 2014
Lg Innotek Co., Ltd., Seoul, KR;
Kyong Jun Kim, Gwangju, KR;
LG Innotek Co., Ltd., Seoul, KR;
Abstract
Disclosed is a semiconductor light emitting device including a first to third conductive semiconductor layers which have an n-type dopant, an active layer, and a fourth and fifth conductive semiconductor layers which have a p-type dopant. The first and third conductive semiconductor layers are a GaN semiconductor, and the second conductive semiconductor layer is an InGaN-based semiconductor layer. The fourth conductive semiconductor layer is formed of an AlGaN semiconductor and the fifth conductive semiconductor layer is formed of a GaN-based semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor, and at least two of the plurality barrier layers has a thickness of about 50 Å to about 300 Å.