The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Aug. 27, 2012
Applicants:

Kazuyoshi Furukawa, Kawasaki, JP;

Yasuhiko Akaike, Kawasaki, JP;

Shunji Yoshitake, Kawasaki, JP;

Inventors:

Kazuyoshi Furukawa, Kawasaki, JP;

Yasuhiko Akaike, Kawasaki, JP;

Shunji Yoshitake, Kawasaki, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/06 (2006.01); H01L 33/10 (2010.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 21/18 (2006.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0079 (2013.01); H01L 21/187 (2013.01); H01L 33/10 (2013.01); H01L 33/16 (2013.01); H01L 33/20 (2013.01);
Abstract

Provided is a laminate containing a first compound semiconductor layer; and a second compound semiconductor layer integrally bonded to the first compound semiconductor layer via a bonding layer. A plane A is in the second compound semiconductor layer bonded to a surface where a plane B is in the first compound semiconductor layer, or a surface where a plane B is in the second compound semiconductor layer bonded to a surface where a plane A in the first compound semiconductor layer. The impurity concentration of the bonding layer is 2×10cmor more.


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