The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Oct. 19, 2010
Applicants:
Alvin D. Compaan, Holland, OH (US);
Victor V. Plotnikov, Toledo, OH (US);
Inventors:
Alvin D. Compaan, Holland, OH (US);
Victor V. Plotnikov, Toledo, OH (US);
Assignee:
The University of Toledo, Toledo, OH (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0296 (2006.01); H01L 31/18 (2006.01); H01L 31/073 (2012.01); H01L 31/0224 (2006.01); H01L 31/075 (2012.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 31/073 (2013.01); Y02E 10/543 (2013.01); H01L 31/1828 (2013.01); H01L 31/022425 (2013.01); H01L 31/075 (2013.01); Y02E 10/548 (2013.01); H01L 31/02167 (2013.01);
Abstract
A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.