The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Aug. 01, 2011
Applicants:
Hai Won Kim, Gyeonggi-do, KR;
Sang Ho Woo, Gyeonggi-do, KR;
Inventors:
Hai Won Kim, Gyeonggi-do, KR;
Sang Ho Woo, Gyeonggi-do, KR;
Assignee:
Eugene Technology Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/0262 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); H01L 21/02219 (2013.01); H01L 21/02211 (2013.01); H01L 21/02532 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/0228 (2013.01); C23C 16/4554 (2013.01);
Abstract
Provided is a method of depositing a cyclic thin film that can provide excellent film properties and step coverage. The method comprises the steps of forming a silicon thin film by repeating a silicon deposition step for depositing silicon on a substrate by injecting a silicon precursor into a chamber into which the substrate is loaded and a first purge step for removing a non-reacted silicon precursor and a reacted byproduct from the chamber; and forming the insulating film including silicon from the silicon thin film by forming a plasma atmosphere into the chamber.