The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Dec. 13, 2012
Applicant:

Korea Institute of Science and Technology, Seoul, KR;

Inventors:

Chong Yun Kang, Seoul, KR;

Seok Jin Yoon, Seoul, KR;

Young Ho Do, Seoul, KR;

Ji Won Choi, Seoul, KR;

Seung Hyub Baek, Seoul, KR;

Hyun Cheol Song, Seoul, KR;

Jin Sang Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/02 (2006.01); H01L 29/22 (2006.01); H01L 41/31 (2013.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); H01L 29/22 (2013.01); H01L 41/31 (2013.01);
Abstract

Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed.


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