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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8828805 B1

PDFFull Text
Date of Patent:
Sep. 09, 2014

Filed:

Feb. 08, 2012

Manufacturing method of semiconductor device

Applicant:

Masato Numazaki, Kanagawa, JP;

Inventor:

Masato Numazaki, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Kanagawa, JP;

Attorney:

Mattingly & Malur, PC

Primary Examiner:

Mohsen Ahmadi

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/495 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/85 (2013.01); H01L 2224/78301 (2013.01); H01L 2924/01079 (2013.01); H01L 2224/48095 (2013.01); H01L 24/97 (2013.01); H01L 2924/01082 (2013.01); H01L 2224/85051 (2013.01); H01L 2223/54486 (2013.01); H01L 2224/97 (2013.01); H01L 21/565 (2013.01); H01L 23/4952 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01047 (2013.01); H01L 24/48 (2013.01); H01L 2224/48479 (2013.01); H01L 24/78 (2013.01); H01L 23/49575 (2013.01); H01L 24/49 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/85986 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/45144 (2013.01); H01L 23/3107 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01033 (2013.01); H01L 2224/48437 (2013.01);
Abstract

The formation of a void is suppressed in the assembly of a semiconductor device. An MCU chip and an AFE chip are mounted over a die pad formed of a quadrangle having a pair of first sides and a pair of second sides. After wire bonding is carried out on the MCU chip and the AFE chip, resin is supplied from the side of one second side of the two second sides to the side of the other second side. The resin is thereby passed through the opening between a first pad group and a second pad group over the MCU chip to fill the area between the chips and thus the formation of a void is suppressed in the area between the chips.

Find Patent Forward Citations

Numazaki, Masato. (2014). Manufacturing method of semiconductor device (U.S. Patent No. 8828805). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8828805

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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