The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Jun. 09, 2010
Hao-chih Yuan, Lakewood, CO (US);
Howard M. Branz, Boulder, CO (US);
Matthew R. Page, Littleton, CO (US);
Hao-Chih Yuan, Lakewood, CO (US);
Howard M. Branz, Boulder, CO (US);
Matthew R. Page, Littleton, CO (US);
Alliance for Sustainable Energy, LLC, Golden, CO (US);
Abstract
A method () is provided for processing a graded-density AR silicon surface () to provide effective surface passivation. The method () includes positioning a substrate or wafer () with a silicon surface () in a reaction or processing chamber (). The silicon surface () has been processed () to be an AR surface with a density gradient or region of black silicon. The method () continues with heating () the chamber () to a high temperature for both doping and surface passivation. The method () includes forming (), with a dopant-containing precursor in contact with the silicon surface () of the substrate (), an emitter junction () proximate to the silicon surface () by doping the substrate (). The method () further includes, while the chamber is maintained at the high or raised temperature, forming () a passivation layer () on the graded-density silicon anti-reflection surface ().