The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Mar. 13, 2013
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Sung Joon Kim, Gyeonggi-do, KR;

Tae Sung Jang, Gyeonggi-do, KR;

Jong Gun Woo, Gyeonggi-do, KR;

Yung Ho Ryu, Gyeonggi-do, KR;

Tae Hun Kim, Gyeonggi-do, KR;

Sang Yeob Song, Gyeonggi-do, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
H01L 33/005 (2013.01); H01L 33/0079 (2013.01); H01L 33/0095 (2013.01); H01L 33/60 (2013.01);
Abstract

A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.


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