The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Mar. 15, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Do Young Rhee, Seoul, KR;

Tan Sakong, Seoul, KR;

Ki Sung Kim, Gyeonggi-do, KR;

Suk Ho Yoon, Seoul, KR;

Young Sun Kim, Gyeonggi-do, KR;

Sung Tae Kim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/26 (2010.01);
U.S. Cl.
CPC ...
H01L 33/005 (2013.01); H01L 33/26 (2013.01);
Abstract

Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.


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