The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Nov. 29, 2011
Guang Pan, Carlsbad, CA (US);
Hiroaki Miyagawa, Oceanside, CA (US);
Hironaka Fujii, Carlsbad, CA (US);
Bin Zhang, San Diego, CA (US);
Rajesh Mukherjee, Irvine, CA (US);
Toshitaka Nakamura, Osaka, JP;
Amane Mochizuki, Carlsbad, CA (US);
Guang Pan, Carlsbad, CA (US);
Hiroaki Miyagawa, Oceanside, CA (US);
Hironaka Fujii, Carlsbad, CA (US);
Bin Zhang, San Diego, CA (US);
Rajesh Mukherjee, Irvine, CA (US);
Toshitaka Nakamura, Osaka, JP;
Amane Mochizuki, Carlsbad, CA (US);
Nitto Denko Corporation, Osaka, JP;
Abstract
Disclosed herein are emissive ceramic materials having a dopant concentration gradient along a thickness of a yttrium aluminum garnet (YAG) region. The dopant concentration gradient may include a maximum dopant concentration, a half-maximum dopant concentration, and a slope at or near the half-maximum dopant concentration. The emissive ceramics may, in some embodiments, exhibit high internal quantum efficiencies (IQE). The emissive ceramics may, in some embodiments, include porous regions. Also disclosed herein are methods of make the emissive ceramic by sintering an assembly having doped and non-doped layers.