The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Jun. 22, 2010
Michael L. Bradford, Midland, MI (US);
Eric Scott Moyer, Midland, MI (US);
Kasumi Takeuchi, Midland, MI (US);
Sheng Wang, Midland, MI (US);
Craig Rollin Yeakle, Midland, MI (US);
Michael L. Bradford, Midland, MI (US);
Eric Scott Moyer, Midland, MI (US);
Kasumi Takeuchi, Midland, MI (US);
Sheng Wang, Midland, MI (US);
Craig Rollin Yeakle, Midland, MI (US);
Dow Corning Corporation, Midland, MI (US);
Abstract
A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CFis used to 'etch back' the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing Oto etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).