The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Sep. 02, 2010
Applicants:

Rakesh Poddar, Santa Clara, CA (US);

Ami Chand, Fremont, CA (US);

Inventors:

Rakesh Poddar, Santa Clara, CA (US);

Ami Chand, Fremont, CA (US);

Assignee:

Applied Nanostructures, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01Q 70/08 (2010.01); G01Q 60/38 (2010.01); G01Q 70/10 (2010.01); B82Y 35/00 (2011.01);
U.S. Cl.
CPC ...
G01Q 60/38 (2013.01); B82Y 35/00 (2013.01); G01Q 70/10 (2013.01);
Abstract

A cantilever-tip assembly for atomic force microscopy (AFM) or other scanning probe microscopy and its method of making based on micro-electromechanical systems (MEMS). Two crystalline silicon wafers and attached oxide and nitride layers are bonded together across an intermediate dielectric layer. A thin cantilever with a tetrahedral silicon probe tip at its distal end are formed in one wafer by anisotropic etching of silicon and a support structure is formed in the other wafer to support the proximal end of the cantilever preferably having an inclined face formed by anisotropic silicon etching. The cantilever may be silicon or silicon nitride.


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