The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Mar. 20, 2009
Nadja Lönnroth, Helsinki, FI;
Anne Hauch, Roskilde, DK;
Mogens Mogensen, Lynge, DK;
Ming Chen, Roskilde, DK;
Nadja Lönnroth, Helsinki, FI;
Anne Hauch, Roskilde, DK;
Mogens Mogensen, Lynge, DK;
Ming Chen, Roskilde, DK;
Technical University of Denmark, Kgs. Lyngby, DK;
Abstract
The present invention provides a solid oxide cell stack, comprising: —at least two cells which each comprise a first electrode layer, an electrolyte layer, a second electrode layer, —gas passage ways, and—sealing components, wherein the sealing components comprise a glass component and a component comprising a metal oxide or metal oxide precursor, and wherein the component comprising the metal oxide or metal oxide precursor is located at least in between the glass component and a gas passage way. The present invention further provides a method of producing the above solid oxide cell stack, comprising the steps of: —providing at least two SOC cells comprising each a first electrode layer or electrode precursor layer, an electrolyte layer, a second electrode layer or electrode precursor layer; —stacking at least two cells so as to form a cell stack including gas passage ways; and—sealing said cell stack with sealing components, wherein the sealing components comprise a glass component and a component comprising a metal oxide or metal oxide precursor, and wherein the component comprising the metal oxide or metal oxide precursor is at least located in between the glass component and a gas passage way.