The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jun. 28, 2012
Mark M. Doherty, Westford, MA (US);
Lui Lam, Winchester, MA (US);
Chun-wen Paul Huang, Methuen, MA (US);
Anthony Francis Quaglietta, Methuen, MA (US);
Mark M. Doherty, Westford, MA (US);
Lui Lam, Winchester, MA (US);
Chun-Wen Paul Huang, Methuen, MA (US);
Anthony Francis Quaglietta, Methuen, MA (US);
SiGe Semiconductor, Inc., Ottawa, ON, CA;
Abstract
A system and method are provided for reducing dynamic EVM of an integrated circuit power amplifier (PA) used for RF communication. In a multistage PA, the largest amplification stage is biased with a high amplitude current pulse upon receipt of a Tx enable, before receipt of the RF signal data burst. The high amplitude current pulse causes a large portion of the total ICQ budget of the multistage PA to pass through the largest amplification stage causing the entire integrated circuit to rapidly approach steady-state operating conditions. A smoothing bias current is applied to the largest amplification stage after the pulse decays to compensate for transient bias current levels while standard bias circuitry is still approaching steady-state temperature.