The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Aug. 25, 2011
Shen Ren, Palo Alto, CA (US);
David A. B. Miller, Stanford, CA (US);
Shen Ren, Palo Alto, CA (US);
David A. B. Miller, Stanford, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
Improved integration of optoelectronic devices is provided by a spacer layer laterally sandwiched between distinct regions that are monolithically fabricated onto the same substrate (e.g., by selective epitaxy). An optical waveguide in one of the regions can optically couple to an optoelectronic device in another of the regions through the spacer layer, thereby providing a monolithically integrated form of butt-coupling. Preferably, the spacer layer thickness is less than about 50 nm, and is more preferably less than about 20 nm, to reduce optical loss. The spacer layer is preferably electrically insulating, to prevent shorting of devices grown by selective epitaxy.