The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Sep. 06, 2013
Applicant:
Sharp Kabushiki Kaisha, Osaka, JP;
Inventors:
Toshiyuki Kawakami, Nara, JP;
Tomoki Ono, Pittsburgh, PA (US);
Shigetoshi Ito, Shijonawate, JP;
Susumu Omi, Kitakatsuragi-gun, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/22 (2006.01); H01S 5/323 (2006.01); H01S 5/10 (2006.01);
U.S. Cl.
CPC ...
H01S 5/22 (2013.01); H01S 5/32341 (2013.01); H01S 5/10 (2013.01);
Abstract
In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.